Resistive memory device and fabrication method thereof

ABSTRACT

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a bottom structure including a heating electrode, data storage materials, each of the data storage materials formed on the bottom structure in a confined structure perpendicular to the bottom structure, and having a lower diameter smaller than an upper diameter, an upper electrode formed on each of the data storage materials, and an insulation unit formed between adjacent data storage materials.

CROSS-REFERENCES TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. §119(a) toKorean application number 10-2013-0046088, filed on Apr. 25, 2013, inthe Korean Intellectual Property Office, which is incorporated herein byreference in its entirety.

BACKGROUND

1. Technical Field

The inventive concept relates to a semiconductor memory device, and moreparticularly, to a resistive memory device and a fabrication methodthereof.

2. Related Art

Resistive r emory devices are memory devices using a programmableresistance change material as a data storage node, and a level of datastored in the resistive memory device is divided according to aresistance value of a resistance change material.

Phase-change random access memory devices (PCRAMs) are a typical exampleof the resistive memory devices. The PCRAMs use a chalcogenide materialas a phase-change material, and store data using a difference in aresistance value changed according to phase transition of a phase-changematerial between an amorphous state and a crystalline state.

Recently, a structure, in which a phase-change material is formed in aconfined type and interference between adjacent cells and a resetcurrent are reduced, is suggested, and FIGS. 1A to 1H illustrate amethod of fabricating a conventional resistive memory device.

Referring to FIG. 1A, an interlayer insulating layer 103 and a bufferlayer 105 are sequentially formed on a semiconductor substrate 101, inwhich a bottom structure is formed, A first hole 107, exposing apredetermined portion of the semiconductor substrate 101, is formed. Aheating electrode 109 is formed in a lower portion of the first hole107. The interlayer insulating layer 103 may include an oxide, and thebuffer layer 105 may include a nitride.

As illustrated in FIG. 1B, a liner insulating layer 111 is formed on thesemiconductor substrate including the heating electrode 109. Here, theliner insulating layer 111 may include a material having the same etchcharacteristic as or similar etch characteristic from the etchcharacteristic of the buffer layer 105.

As illustrated in FIG. 1C, a first insulating layer 113 is formed on thesemiconductor substrate, including the liner insulating layer 111, tofill the inside of the first hole 107. The first insulating layer 113 isplanarized and recessed in the first hole 107 to a predetermined height.The first insulating layer 113 may include a material having an etchcharacteristic that is different than an etch characteristic of thebuffer layer 105 and an etch characteristic of the liner insulatinglayer 111. For example, the first insulating layer 113 may include spinon dielectric (SOD).

As illustrated in FIG. 1D, a spacer insulating layer is formed on thesemiconductor substrate, including the first insulating layer 113, andthen etched to form a spacer 115 on an inner wall of the first hole 107.The first insulating layer 113 is then removed to form a second hole117, as illustrated in FIG. 1E.

After the second hole 117 is formed, a second insulating layer 119 isformed on the semiconductor substrate, including the second hole 117. Atthis time, since the second hole 117 has a structure in which an upperdiameter is narrow and a lower diameter is wide, the second insulatinglayer 119 is buried so that a void is formed in a lower portion of thesecond hole 117. The second insulating layer 119 may include a materialhaving the same etch characteristic as or a different etchcharacteristic from the etch characteristic of the buffer layer 105 andthe liner insulating layer 111.

Therefore, the second I insulating layer 119 is removed to apredetermined target depth through an etching process to obtain akeyhole structure as illustrated in FIG. 1G.

After the keyhole structure is formed, a phase-change material pattern121 and an upper electrode 123 are formed in the keyhole structure, asillustrated in FIG. 1H.

The PCRAM having the keyhole structure is suggested to overcome a limitof an exposure and etch process for forming a fine contact having a nanocritical dimension, and the PCRAM is advantageous to reduce a resetcurrent through reduction in a contact area between the phase-changematerial pattern 121 and the heating electrode 109.

However, in the ultra-fine memory device, the size of the unit memorydevice may reduced as illustrated in FIGS. 1A to 1G, but a space betweencells is also reduced. In particular, when a crystalline state of thephase-change material is changed by Joule's heat, heat transferred tothe phase-change material pattern 121 from the heating electrode may betransferred to adjacent cells. Thus, a thermal effect between theadjacent cells is increased as the space between the cells is reduced.

Further, to form the keyhole structure using the conventionalfabrication method of the PCRAM, the process of forming the spacer, theprocess of forming the first insulating layer, the process of removingand recessing the first insulating layer, the process of forming thesecond insulating layer, and the process of removing the secondinsulating layer are performed. Therefore, the fabrication process iscomplicated, and thus a processing time is also increased.

SUMMARY

An exemplary resistive memory device may include a bottom structureincluding a heating electrode; a plurality of openings extendingsubstantially perpendicular to a surface of the bottom structure, eachopening, of the plurality of openings, being defined by a structure tohave a first diameter, adjacent to the bottom structure, and to have asecond diameter, remote from the bottom structure, wherein the firstdiameter is less than the second diameter; a data storage materialformed in each opening of the plurality of openings; an upper electrodeformed on the data storage material; and an air gap formed betweenadjacent data storage materials.

A method of fabricating an exemplary resistive memory device may includeforming a first material layer having a first oxidation rate on asemiconductor substrate, on which a bottom structure is formed; forminga second material layer, having a second oxidation rate lower than thefirst oxidation rate, over the first material layer; patterning thesecond material layer and the first material layer to form patternstructures; oxidizing surfaces of the pattern structures to form oxidelayers; forming an insulating layer on the semiconductor substrate,including the pattern structures having the oxidized surfaces;planarizing the insulating layer to expose an upper surface of thesecond material layer; forming storage node holes by removing the secondmaterial layer and the first material layer from the oxide layers; andforming a data storage material in the storage node holes.

These and other features, aspects, and implementations are describedbelow in the section entitled “DETAILED DESCRIPTION”.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of thesubject matter of the present disclosure will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings, in which:

FIGS. 1A to 1H are cross-sectional views illustrating a method offabricating a conventional resistive memory device;

FIGS. 2A to 2F are cross-sectional views illustrating an exemplarymethod of fabricating an exemplary resistive memory device;

FIG. 3 is an illustrative view illustrating an example of a patternstructure illustrated in FIG. 2A; and

FIG. 4 is an illustrative view illustrating another example of a patternstructure illustrated in FIG. 2A.

DETAILED DESCRIPTION

Hereinafter, exemplary implementations will be described in greaterdetail with reference to the accompanying drawings.

Exemplary implementations are described herein with reference tocross-sectional illustrations that are schematic illustrations ofexemplary implementations (and intermediate structures). As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary implementations should not be construed aslimited to the particular shapes of regions illustrated herein but maybe to include deviations in shapes that result, for example, frommanufacturing. Throughout the disclosure, reference numerals corresponddirectly to the like numbered parts in the various figures andembodiments of the present invention. Like reference numerals in thedrawings denote like elements. It should be readily understood that themeaning of “on” and “over” in the present disclosure should beinterpreted in the broadest manner such that “on” means not only“directly on” but also “on” something with an intermediate feature(s) ora layer(s) therebetween, and that “over” means not only directly on topbut also on top of something with an intermediate feature(s) or alayer(s) therebetween.

FIGS. 2A to 2F are cross-sectional views illustrating an exemplarymethod of fabricating an exemplary resistive memory device.

Referring to FIG. 2A, a semiconductor substrate 201 is formed. A bottomstructure 203, including an access device (not shown) and a heatingelectrode (not shown), is formed on the semiconductor substrate 201. Afirst material layer 205, having a first oxidation rate, and a secondmaterial layer 207, having a second oxidation rate lower than the firstoxidation rate, are sequentially formed on the bottom structure 203. Thefirst material layer 205 and the second material layer 207 are patternedto form a hole 209. Thicknesses of the first material layer 205 and thesecond material layer 207 may be predetermined. The thickness of thefirst material layer 205 may be smaller than the thickness of the secondmaterial layer 207.

In an exemplary implementation, the first material layer 205 may includesilicon germanium SiGe and the second material layer 207 may includepolysilicon. In an alternative exemplary implementation, the firstmaterial layer 205 may include doped polysilicon and the second materiallayer 207 may include undoped polysilicon.

A combination of the materials for the first and second material layers205 and 207 is not limited thereto, and any combination in which theoxidation rate of the first material layer 205 is larger than theoxidation rate of the second material layer 207 may be used.

Further, if the first material layer 205 includes SiGe, then theoxidation rate of the first material layer 205 may be controlled basedon a concentration of Ge. Therefore, the concentration of Ge may bechanged according to a required size of the unit memory device. As theoxidation rate of the first material layer 205 is increased, a contactarea between a data storage material (to be formed later) and the bottomstructure (heating electrode) may be reduced, and a reset current may bereduced.

The first material layer 205 and the second material layer 207 may bepatterned in a circular pattern or in a line-shaped extending topredetermined direction.

FIGS. 3 and 4 are illustrative views of an example of the patternstructure illustrated in FIG. 2A. FIG. 3 illustrates that the firstmaterial layer 205 and the second material layer 207 are patterned in acircular pattern, while FIG. 4 illustrates that the first material layer205 and the second material layer 207 are patterned in a substantiallyrectangular pattern.

Referring to FIG. 2B, surfaces of the first material layer 205 and thesecond material layer 207 are oxidized to form an oxide layer 211. Asdescribed above, since the first material layer 205 has an oxidationrate that is higher than the oxidation rate of the second material layer207, the oxide layer 211 is formed to be thicker on an outer surface ofthe first material layer 205 than on an outer surface of the secondmaterial layer 207.

As illustrated in FIG, 2C, an insulating layer 213 is formed on thesemiconductor substrate including the oxide layer 211. The insulatinglayer 213 may include a material having poor step coveragecharacteristic. The insulating layer 213 may include a nitride having anetch characteristic that is different than an etch characteristic of theoxide layer 211. Since a lower diameter of the hole 209 is reduced bythe oxide layer 211, and the step coverage of the insulating layer 213is poor, the insulating layer 213 does not completely fill a lowerportion of the hole 209. Therefore an air gap 214 is intentionallygenerated in the lower portion of the hole 209, and serves as aninsulation unit configured to prevent interference between cells.

As illustrated in FIG. 2D, the insulating layer 213 is planarized toexpose an upper surface of the second material layer 207.

When the upper surface of the second material layer 207 is exposed, thesecond material layer 207 and the first material layer 205 may beremoved. FIG. 2E illustrates a state in which second material layer 207and the first material layer 205 are removed to form a storage node hole215.

It can be seen from FIG. 2E that the storage node hole 215 has a lowerdiameter that is smaller than an upper diameter. Therefore a keyholestructure may be simply formed without complicated processing, such as aforming a spacer, forming an insulating layer, and forming theinsulating layer.

Referring to FIG. 2F, a data storage material 217 and an upper electrode219 are formed within the storage node hole 215 to form the resistivememory device. The air gap 214 (the insulation unit) is interposedbetween the unit resistive memory devices, to prevent heat generated inthe data storage material 217 from being transferred to adjacent cells.

The data storage material 217 may include, for example, a phase-changematerial, such as germanium-antimony-tellurium (GST), but the datastorage material 217 is not limited thereto, and may include, forexample, a perovskite or a transition metal oxide.

The exemplary resistive memory device may include the data storagematerial 217 formed on the bottom structure, which includes the heatingelectrode, in a direction substantially perpendicular to the bottomstructure. The data storage material 217 may have a lower diameter thatis smaller than an upper diameter. The exemplary resistive memory devicemay further include the upper electrode 219, which is formed on the datastorage material 217, and the insulation unit (the air gap 214) formedbetween adjacent data storage materials 217.

The above exemplary implementation of the present invention isillustrative and not !imitative. Various alternatives and equivalentsare possible. The invention is not limited by the exemplaryimplementation described herein. Nor is the invention limited to anyspecific type of semiconductor device. Other additions, subtractions, ormodifications are obvious in view of the present disclosure and areintended to fall within the scope of the appended claims.

1. A resistive memory device, comprising: a bottom structure including aheating electrode; a plurality of openings extending substantiallyperpendicular to a surface of the bottom structure, each opening, of theplurality of openings, being defined by a structure to have a firstdiameter, adjacent to the bottom structure, and to have a seconddiameter, remote from the bottom structure, wherein the first diameteris less than the second diameter; a data storage material formed in eachopening of the plurality of openings; an upper electrode formed on thedata storage material; and an insulation unit formed between adjacentdata storage materials.
 2. The resistive memory device of claim 1,wherein the structures include an oxide layer formed on outercircumferences of the data storage material and the upper electrode. 3.The resistive memory device of claim 2, wherein the insulation unit isformed in an insulation layer interposed between the adjacent datastorage materials.
 4. The resistive memory device of claim 1, whereinthe insulation unit is an air-gap.
 5. The resistive memory device ofclaim 1, wherein portions of the structures that define the firstdiameters have a thickness that is greater than a thickness of portionsof the structures that defines the second diameters.
 6. The resistivememory device of claim 1, wherein the data storage material includes aphase-change material, a perovskite, or a transition metal oxide.
 7. Theresistive memory device of claim 1, wherein the upper electrode isformed in each opening of the plurality of openings.
 8. The resistivememory device of claim 7, wherein top surfaces of the upper electrodesare substantially co-planar with top surfaces of the structures.
 9. Theresistive memory device of claim 1, wherein portions of the structuresthat define the first diameters comprise a first material, and portionsof the structures that define the second diameters comprises a secondmaterial that is different than the first material.
 10. The resistivememory device of claim 9, wherein the first material has a rate ofoxidation that is greater than a rate of oxidation of the secondmaterial.
 11. The resistive memory device of claim 9, where the firstmaterial includes silicon germanium and the second material includespolysilicon. 12-20. (canceled)